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| P–n junction isolation ： ウィキペディア英語版 |
P–n junction isolation
p–n junction isolation is a method used to electrically isolate electronic components, such as transistors, on an integrated circuit (IC) by surrounding the components with reverse biased p–n junctions.
==Introduction==
By surrounding a transistor, resistor, capacitor or other component on an IC with semiconductor material which is doped using an opposite species of the substrate dopant, and connecting this surrounding material to a voltage which reverse-biases the p–n junction that forms, it is possible to create a region which forms an electrically isolated "well" around the component.
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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